一般常見的專利訴訟，二造大多為企業，或原告是NPE、被告為企業，即使是NPE也大多為企業，較少見由基金會所發起的訴訟，今天來介紹一件由大學贊助的基金會所發起的專利訴訟。
波士頓大學基金會(Trustees
of Boston University)於2012.10.12.在Massachusetts地方法院控告台灣的億光電子(Everlight
Electronics., Ltd.)及其美國子公司、韓國首爾半導體(Seoul Semiconductor Company,
Ltd)及其北美子公司侵害其US5,686,738號專利，該專利為一可在分子束外延生長室製備高絕緣性GaN單晶薄膜的製程。
Smart的看法
以基金會模式經營學校的專利，在美國是常見的方式，反而在台灣比較少見，本案的系爭專利最先是專屬權給Cree，Cree分別在2001年及2006年以該專利控告過Nichia及Bridgelux，這次由基金會親自提告，是不是授權期間結束，尚待確認，由EPO的網站上看不到授權的相關資訊。
US5,686,738
Title
:Highly insulating monocrystalline gallium nitride thin films
Filing Date :
1995.1.13.
Issue Date : 1997.11.11.
Abstract :
This invention relates
to a method of preparing highly insulating GaN single crystal films in a
molecular beam epitaxial growth chamber. A single crystal substrate is provided
with the appropriate lattice match for the desired crystal structure of GaN. A
molecular beam source of Ga and source of activated atomic and ionic nitrogen
are provided within the growth chamber. The desired film is deposited by
exposing the substrate to Ga and nitrogen sources in a two step growth process
using a low temperature nucleation step and a high temperature growth step. The
low temperature process is carried out at 100-400.degree. C. and the high
temperature process is carried out at 600-900.degree. C. The preferred source of
activated nitrogen is an electron cyclotron resonance microwave plasma.
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